At the upcoming ECOC exhibition in Brussels, Albis will present its new product PS20Y4. This product is an assembly of multiple 56 Gbaud photodiode chips that are flip-chip soldered onto a metallized ceramic submount with coplanar G-S-G contact layout and a channel pitch of 750 μm. All photodiodes are positioned with high accuracy with respect to the alignment features to guarantee a chip-to-chip alignment down to ±6 μm.
The photodiode array consists of InGaAs/InP very high-speed photodiode chips with integrated backside lenses. The bottom illuminated p-i-n photodiode structure is optimized for up to 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. The integrated backside lens focuses the incoming light beam on the top side detecting area, enabling easy and efficient optical coupling by increasing the effective active diameter up to 50 μm.
Customized versions with other submount layouts, optimized for low capacitance or low inductance, wrap-around metallization and other channel pitches are available on request.
Albis Optoelectronics is a leading designer, developer and manufacturer of high-speed photodiodes. Since more than 15 years, the company has offered the broadest portfolio of Telcordia qualified InP and GaAs photodiodes for datacom and telecom applications in the industry.
All photodiode products are manufactured in-house in Albis’ dedicated clean-room facilities. Product highlights include: PIN photodiodes for 10G, 25G and 40G digital and analog receivers.
High power photodiodes and packaged photodetectors. Low bias APDs for 2.5G and 10G OLT/ ONUs. 25G APDs for 28 Gbaud PAM-4 and 100GBASE-ER4 applications. Side-illuminated monitor diodes and monitor diode arrays. Photodiodes with integrated lenses and optical filters. And last but not least hermetically packaged, short and long wavelength microwave photodetectors up to 30 GHz.