OFC: Scintil Photonics shows its III-V-Augmented SiPho IC
Created March 7, 2022
Technologies and ProductsScintil Photonics, a fabless company developing and marketing silicon photonic integrated circuits, has unveiled a prototype III-V-Augmented Silicon Photonic Integrated Circuit. The single-chip solution comprises all the active and passive components made from standard silicon photonics available in commercial foundries, with III-V optical amplifiers/lasers integrated on the backside of advanced silicon photonic circuits. Scintil says its solution will boost communications in data centres, High-Performance Computing (HPC), and 5G networks, prime users of optical transceivers.
The 1,600 Gbit/sec prototype IC integrates state-of-the-art silicon modulators and germanium photodetectors supporting 56 GBaud PAM 4, with integrated III-V-optical amplifiers. The IC technology offers the capability of delivering sustainable bit rates through parallelization and the increase of baudrates at a competitive cost per gigabit per second. It also uses wafer-scale bonding of III-V materials on silicon for integrating optical amplifiers/lasers.
“We are very pleased to announce our prototype IC at OFC this year,” said Sylvie Menezo, president and CEO of Scintil Photonics. “The close collaboration with our commercial foundry was key to achieving this fabrication milestone, resulting in unprecedented levels of integration and performance. Scintil is already working with three leading edge customers; it is fundamental to them that we can prototype and produce in commercial high-volume silicon foundries, using multi-customer standard processes.”
Scintil Photonics can be found at booth #5227
For more information, visit www.scintil-photonics.com
