New 112Gbd Photodiode by Albis Optoelectronics

Created December 15, 2020
Technologies and Products

At the upcoming virtual ECOC exhibition Albis will present its new ultra high-speed photodiode PD60X1 featuring an integrated backside lens.
The bottom illuminated p-i-n photodiode structure is optimized for 112 Gbd PAM- 4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm.
The integrated backside lens focuses the incoming light beam on the topside detecting area. This increases the backside detecting diameter and allows easy and efficient optical coupling.
The photodiode is flip-chip soldered on a metallized ceramic carrier with a ground-signal-ground (GSG) contact layout. The large pads allow placement of multiple bonds.
Albis Optoelectronics is a leading designer, developer and manufacturer of high-speed photodiodes.
Since more than 15 years, the company has offered the broadest portfolio of Telcordia qualified InP and GaAs photodiodes or datacom and telecom applications in the industry.
All photodiode products are manufactured in-house in Albis’ dedicated clean-room facilities. Product highlights include: PIN photodiodes for 10G, 25G and 40G digital and analog receivers. High power photodiodes and packaged photodetectors.
Low bias APDs for 2.5G and 10G OLT/ ONUs. 25G APDs for 28 Gbaud PAM-4 and 100GBASE-ER4 applications. Sideilluminated monitor diodes and monitor diode arrays.
Photodiodes with integrated lenses and optical filters. And last but not least hermetically packaged, short and long wavelength microwave photodetectors up to 30 GHz.


This article was written
by Optical Connections News Team