Switzerland-based Albis Optoelectronics, which designs, develops and manufactures high-speed InP and GaAs photodiodes has debuted its new high power, highly linear microwave photodetector, designed for direct optical-to-electrical conversion of RF-modulated optical signals at 20 GHz. The small, rugged and hermetic PQW package makes the detector suitable for installation in systems operated under severe environmental conditions.
The photodiode inside this module is a high power, high linearity Albis photodiode chip, designed to operate over a wide range of wavelengths from 1260 to 1620 nm. This photodiode is also available mounted on an AlN carrier. It offers a typical bandwidth of 22 GHz for photocurrents up to 50 mA, a responsivity of 0.5 A/W and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA. Typical applications include analogue optical links, microwave photonics and radio-over-fibre.
All photodiode products are manufactured in-house in Albis’ dedicated clean-room facilities. Product highlights include: PIN photodiodes for 10G, 25G and 40G digital and analogue receivers. Low bias, top illuminated APDs for 2.5G and 10G OLT/ONUs. 25G APDs for 28 Gbaud PAM-4 and 100GBASE-ER4 applications. Side-illuminated monitor diodes and monitor diode arrays. Photodiodes with integrated lenses and optical filters. And last but not least hermetically packaged, short and long wavelength microwave photodetectors up to 30 GHz.
Albis is involved in a number of market sectors, including datacom and telecom; microwave photonic links; monitoring and sensing and Lidar. Dr Mayra Irion, support and application engineer at Albis, told Optical Connections, “We are always thinking ahead with our product development, so while the telecoms market is relatively steady at present, we are getting ready for 400G and beyond.” She added that the company was also looking to break into the Lidar market as demand for photodiodes was expected to be massive in the future.
Albis can be found on booth #166
For more information, visit www.albisopto.com