Mitsubishi Electric US is presenting a hands-on mini lab showcasing its high-efficiency, wide-band Doherty Amplifier at Radio & Wireless Week, which runs January 16-17 in Phoenix, AZ. The company is also presenting a technical paper describing this wide-band Doherty power amplifier designed for next-generation LTE base stations, based on the latest Mitsubishi Electric GaN transistor technology.
To break the inherent narrow-band limitation of conventional Doherty design methodology, the company’s paper proposes a frequency dependency-compensating circuit and a modified quarter wavelength inverter incorporating the transistor package parasitic elements.
With improved bandwidth and efficiency, compared to earlier design methodologies, this compact design delivers more than 2.5 W of average power with efficiencies above 45.9% across the full 3.0-3.6GHz band (20MHz LTE signal).
This approach gives customers the ability to design more competitive LTE amplifiers capable of carrier aggregation scenarios in this band. In conjunction with digital pre-distortion to maintain -50dBc ACLR, the use of the wide-band efficient GaN Doherty design can reduce the complexity and energy consumption of the radio, further reducing the base station total cost of ownership.
Mitsubishi Electric’s full line-up of GaN devices, with frequencies in L-, S-, C-, and Ku-bands at output powers ranging from 2W to 100W, supports a wide variety of end-communications applications, including cellular base station, satellite, ground station and point-to-point.
Mitsubishi Electric’s Semiconductor Division offers a wide range of semiconductor and electronic devices designed to advance information processing and telecommunications. The division offers next-generation optical devices that support the rapidly evolving optical telecommunications networks. These include high-frequency gallium nitride, gallium arsenide and silicon RF devices used in a variety of applications from two-way radios to telecommunications satellites.
More information at Mitsubishi Electric US